Intraband-transition-induced dipoles in self-assembled InAsÕGaAs„001... quantum dots
نویسندگان
چکیده
We present experimental evidence for the existence and directionality of dipoles induced by intraband transitions from the electron ground states to high, bound excited states in self-assembled InAs/GaAs quantum dots ~QDs!. Moreover, the orientation of the interband transition induced dipoles is also determined for the same QDs. The findings indicate the potential use of intraband dipoles in asymmetric QDs in proposed quantum gates. © 2002 American Institute of Physics. @DOI: 10.1063/1.1468896#
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Intraband and interband photocurrent spectroscopy and induced dipole moments of InAsÕGaAs„001... quantum dots in n – i – n photodetector structures
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